This report describes the global market size of High Electron Mobility Transistor Market from 2018 to 2021 and its CAGR from 2018 to 2021, and also forecasts its market size to the end of 2030 and its expected to grow with a CAGR of 7.6% from 2023 to 2030.
A High Electron Mobility Transistor (HEMT), also known as a heterojunction field-effect transistor (HFET), is a type of field-effect transistor that operates on the principle of heterojunctions. It is designed to offer high electron mobility in a semiconductor material, enabling fast electron movement and high-speed electronic performance. HEMTs are particularly utilized in high-frequency applications, such as microwave and radio frequency (RF) devices, due to their ability to operate at elevated frequencies and deliver enhanced performance compared to traditional transistors.
Top Companies in the Global High Electron Mobility Transistor Market: Qorvo, Infineon Technologies AG, Mouser Electronics, Inc., MACOM, Wolfspeed, RFHIC Corporation, ST Microelectronics, Texas Instruments, Sumitomo Electric Industries, Ltd., Analog Devices, Inc, others.
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Key Segments Studied in the Global High Electron Mobility Transistor Market
By Type
Gallium Nitride (GaN)
Silicon Carbide (SiC)
Gallium Arsenide (GaAs)
Others
By End-use
Consumer Electronics
Automotive
Industrial
Aerospace & Defense
Others
Business opportunities of High Electron Mobility Transistor Market in the following regions and countries:
North America (USA, Canada and Mexico)
Europe (Germany, Great Britain, France, Italy, Russia, Spain and Benelux countries)
Asia Pacific (China, Japan, India, Southeast Asia, and Australia)
Latin America (Brazil, Argentina and Colombia)
Remaining Countries
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